2SB1567 transistor equivalent, pnp transistor.
*Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*High DC Current Gain
*Built-in resistor between base and emitter
*Complement to Type 2SD2398
*Minimum Lot-to-Lot variations for robust device
performance and reliable o.
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