2SB1562 transistor equivalent, silicon pnp power transistor.
*Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*High DC Current Gain-
: hFE= 300~1000@ (VCE= -5V , IC= -0.5A)
*Low Saturation Voltage-
: VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*De.
Image gallery
TAGS
Download (Size : 191.94KB)