2SB1565 transistor equivalent, pnp transistor.
*Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collecto.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Collector Power Dissipation-
: PC= 25 W@ TC= 25℃
*Low Collector Saturation Voltage
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performa.
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