2SB1353 transistor equivalent, silicon pnp power transistor.
*Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
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*Good Linearity of hFE
* Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
*Complement to Type 2SD2033
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use i.
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