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2SB1302 - PNP Transistor

Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity.
  • Fast switching speed.
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB1323 Epitaxial Planar Silicon Transistor
2SB1324 PNP / NPN Epitaxial Planar Silicon Transistors
2SB1325 PNP / NPN Epitaxial Planar Transistors
2SB1388 PNP Epitaxial Planar Silicon Transistors
2SB1394 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2555B 2SB1302 SANYO Semiconductors DATA SHEET 2SB1302 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • DC-DC converters, motor drivers, relay drivers, lamp drivers. Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
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