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2SB1064 INCHANGE PNP Transistor

Description ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1505 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...
Features C= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= ...

Datasheet PDF File 2SB1064 Datasheet - 213.68KB

2SB1064  






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