Extremely satisfactory linearity of the forward current transfer ratio hFE.
Wide safe operation area.
High transition frequency fT.
Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2.
0.1
14.0±0.5
0.8±0.1.
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open).
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Power Transistors
2SB1063
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD1499 ■ Features
• Extremely satisfactory linearity of the forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
14.0±0.5
0.8±0.
2SB1063 Datasheet
