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2N6355 - NPN Transistor

Description

High DC current gain : hFE= 500(Min)@ IC= 4A With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC current gain : hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 0.
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