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Y27US08121M Datasheet Hynix Semiconductor

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Hynix Semiconductor · Y27US08121M File Size : 796.67KB · 2 hits

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SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatibility for all densities STATUS REGISTER ELECTRONI.

Y27US08121M Y27US08121M Y27US08121M
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HY27US08121M
Y27US08121M
Y2002KC250
Y200CKC250
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