Download Y2010DN Datasheet PDF
Fairchild Semiconductor
Y2010DN
Y2010DN is Schottky Barrier Rectifier manufactured by Fairchild Semiconductor.
Features - Low forward voltage drop - High frequency properties and switching speed - Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Symbol Parameter RθJC Maximum Thermal Resistance, Junction to Case (per diode) Electrical Characteristics (per diode) Symbol Parameter - Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A - Maximum Instantaneous Reverse Current @ rated VR - Pulse Test: Pulse Width=300μs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 100 100 20 150 -65 to +150 Value...