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Y2010DN - Schottky Barrier Rectifier

Features

  • Low forward voltage drop.
  • High frequency properties and switching speed.
  • Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating.

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Note: The manufacturer provides a single datasheet file (Y2010DN-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

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FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2.
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