Y2010DN
Y2010DN is Schottky Barrier Rectifier manufactured by Fairchild Semiconductor.
Features
- Low forward voltage drop
- High frequency properties and switching speed
- Guard ring for over-voltage protection
August 2009
1.Anode 3.Anode
2. Cathode
TO-220
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VRRM VR
IF(AV) IFSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ TC = 120°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
Parameter
- Maximum Instantaneous Forward Voltage
IF = 10A IF = 10A IF = 20A IF = 20A
- Maximum Instantaneous Reverse Current @ rated VR
- Pulse Test: Pulse Width=300μs, Duty Cycle=2%
TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C
TC = 25 °C TC = 125 °C
Value 100 100 20 150
-65 to +150
Value...