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HY5S5B6GLF-HE - 256Mbit (16Mx16bit) Mobile SDR Memory

Download the HY5S5B6GLF-HE datasheet PDF. This datasheet also covers the HY5S5B6GLF-6 variant, as both devices belong to the same 256mbit (16mx16bit) mobile sdr memory family and are provided as variant models within a single manufacturer datasheet.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5S5B6GLF-6_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Apr. 2006 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series 11 Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 Initial Draft 1. Changed 166MHz IDD1 : 60mA --> 75mA 133MHz IDD1 : 55mA --> 65mA 105MHz IDD1 : 50mA --> 55mA 2. Remove CL2 operation (Page 13 to 14) 1. Release History Draft Date Feb. 2006 Remark Preliminary 0.2 Mar. 2006 Preliminary 1.0 Apr. 2006 Final Rev 1.