HY5S5B6ELF-HE datasheet, i/o equivalent, Hynix Semiconductor

HY5S5B6ELF-HE i/o equivalent, 256mbit mobile sdr sdrams based on 4m x 4bank x16 i/o.

Features and benefits

Standard SDRAM Protocol
*
* Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4ban.

Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jul. 2005 1 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series DESCRIPTION The H.

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