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HY5RS123235FP-12 - 512M (16Mx32) GDDR3 SDRAM

Download the HY5RS123235FP-12 datasheet PDF. This datasheet also covers the HY5RS123235FP variant, as both devices belong to the same 512m (16mx32) gddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • 2.2V +/-0.1V VDD/VDDQ power supply supports 900MHz 2.0V VDD/ VDDQ wide range min/max power supply supports 700/ 800MHz.
  • 1.8V VDD/ VDDQ wide range min/max power supply supports 500 / 600MHz.
  • Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle.
  • Calibrated output driver Differential.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5RS123235FP-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by SK Hynix

Part Number Description
HY5RS123235FP-11 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-14 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-16 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-2 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP 512M (16Mx32) GDDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY5RS123235FP 512M (16Mx32) GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.3 / Feb. 2006 1 HY5RS123235FP Revision History Revision No. 0.1 0.2 History Defined target spec.
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