HY57V161610E dram equivalent, 2 banks x 512k x 16 bit synchronous dram.
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* Single 3.0V to 3.6V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of.
which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E i.
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is o.
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