• Part: HY27UF082G2B
  • Description: 2Gb NAND FLASH
  • Manufacturer: SK Hynix
  • Size: 405.37 KB
Download HY27UF082G2B Datasheet PDF
SK Hynix
HY27UF082G2B
HY27UF082G2B is 2Gb NAND FLASH manufactured by SK Hynix.
- Part of the HY27UF162G2B comparator family.
description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / Jan. 2008 1 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash Document Title 2Gbit (256Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Add ULGA Package. 0.1 - Figures & texts are added. 2) Change t RCBSY to t RBSY 3) Change figure 13 0.2 1) Delete Preliminary Jan. 09. 2008 Sep. 11. 2007 Preliminary History Draft Date Jul. 03. 2007 Remark Preliminary Rev 0.2 / Jan. 2008 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8/x16 bus width. - Address/ Data Multiplexing - Pinout patiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 2048 blocks - x16 : (1K + 32) words x 64 pages x 2048 blocks PAGE SIZE - (2K + 64 spare) Bytes - (1K + 32 spare) Words BLOCK SIZE - (128K + 4Kspare) Bytes - (64K + 2Kspare) Words PAGE READ / PROGRAM - Random access : 25us (max.) - Sequential access : 25ns (min.) - Page program time : 200us (typ.) - Multi-page program time (2 pages) : 200us (typ.) COPY BACK PROGRAM - Automatic block download without latency time FAST BLOCK ERASE - Block erase time: 1.5ms (typ.) - Multi-block erase time (2 blocks) : 1.5ms (typ.) CACHE READ - Internal (2048 + 64) Byte buffer to improve the read throughtput. Rev 0.2 / Jan. 2008 3 STATUS REGISTER - Normal Status Register (Read/Program/Erase)...