HY27UA1G1M datasheet, memory equivalent, Hynix Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 781.84KB)

Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or .

Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pin.

Description

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface Using /CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics 0.4 tCRY Before After 60 + .

Image gallery