H5DU1262GTR sdram equivalent, 128mb ddr sdram.
* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333 ,400 and 500) All inputs and outputs are compatible with SSTL_2 interface Fully dif.
which requires large memory density and high bandwidth. This Hynix 128Mb DDR SDRAMs offer fully synchronous operations r.
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / May 2009 1
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