Datasheet Summary
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Sep. 2010 1 il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series
Document Title
4Bank x 4M x 32bits Synchronous DRAM
Revision History
Revision No.
History
Draft Date
Remark
1.0 1.1 1.2
- First Version Release
- Add AC Overshoot/Undershoot Specification
- Correction
Feb. 2010 Feb. 2010 Sep....