CS630A4H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche e.
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rat.
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.23
the avalanche energy. T.
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