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CS630A3H - Silicon N-Channel Power MOSFET

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Datasheet Details

Part number
CS630A3H
Manufacturer
Huajing Microelectronics
File Size
726.35 KB
Datasheet
CS630A3H-HuajingMicroelectronics.pdf
Description
Silicon N-Channel Power MOSFET

CS630A3H Product details

Description

CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..

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