Datasheet Details
- Part number
- CS630A3H
- Manufacturer
- Huajing Microelectronics
- File Size
- 726.35 KB
- Datasheet
- CS630A3H-HuajingMicroelectronics.pdf
- Description
- Silicon N-Channel Power MOSFET
CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..
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