l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche ene.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating .

CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 650 5 32 1.6 enhance the avalanche energy. .

CS5N65FA9H

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