l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical: 7pF) l 100% Single Pulse avalanche en.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating .

CS5N65 A7H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 5 32 1.6 performance and enhance the avalanche energy. T.

CS5N65A3

CS5N65A4

CS5N65A8H

CS5N65FA9H

CS5N60A8H

CS5N06AE-1

CS5N10A23-G

CS5N10AE-G-1

CS5N10AQ2-G-1

CS5N20A3

CS5N20A4

CS5N20FA9

CS5N70A4

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts