CS4N60FA9TDY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche en.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
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CS4N60F A9TDY, the silicon N-channel
Enhanced VDMOSFETs, is obtained by the self-aligned
planar Technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor can be used in various
.
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