CS4N60FA9HD - Silicon N-Channel Power MOSFET

Huajing Discrete Devices

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Datasheet Details

Part number: CS4N60FA9HD
Manufacturer: Huajing Discrete Devices
File Size: 317.67 KB
Datasheet: CS4N60FA9HD-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

CS4N60FA9HD Product details

Description

CS4N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard..

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test.

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Silicon N-Channel Power MOSFET Huajing Discrete Devices

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