CS40N20FA9E mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche e.
UPS,Inverter,Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt.
CS40N20F A9E the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various pow.
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