l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche e.

UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt.

CS40N20 A8 the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power.

CS40N20ANH

CS40N20FA9E

CS40N20FA9H

CS40N20FA9R-G

CS40N25A8R

CS40N25FA9R

CS40N27

CS40N045A4

CS400

CS4041

CS4050V-01L

CS40D

CS40L100CT-A

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