l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche ene.

Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rat.

CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 800 3 75 4.0 the avalanche energy. Th.

CS3N80A3H1-G

CS3N80A4

CS3N80A4RZ-G

CS3N80A8

CS3N80ARH

CS3N80FA9

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H

CS3N20A3H

CS3N20A4H

CS3N20ATH

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