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CS3N80FA9 Datasheet, HUAJING MICROELECTRONICS

CS3N80FA9 mosfet equivalent, silicon n-channel power mosfet.

CS3N80FA9 Avg. rating / M : 1.0 rating-17

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CS3N80FA9 Datasheet

Features and benefits

l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche ene.

Application

Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rat.

Description

CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 800 3 30 4.0 the avalanche energy. T.

Image gallery

CS3N80FA9 Page 1 CS3N80FA9 Page 2 CS3N80FA9 Page 3

TAGS

CS3N80FA9
Silicon
N-Channel
Power
MOSFET
CS3N80A3
CS3N80A3H1-G
CS3N80A4
HUAJING MICROELECTRONICS

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