l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche .

Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS I.

VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avala.

CS3N40A23

CS3N40A3H

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H

CS3N20A3H

CS3N20A4H

CS3N20ATH

CS3N25

CS3N30B23H

CS3N50B3

CS3N50B3HY

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