CS3N40A3H Datasheet, Huajing Microelectronics

l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche e.

Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS.

VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avala.