Silicon N-Channel Power MOSFET
CS1N60 C3H
○R
General Description：
CS1N60 C3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
600
1.0
30
8
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤10.5Ω)
l Low Gate Charge (Typical Data:4.7nC)
l Low Reverse transfer capacitances(Typical:2.9pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
1.0
0.6
4.0
±30
20
6
1.1
5.0
30
0.24
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1
