CS1N60C3H Datasheet - Huajing Microelectronics

CS1N60C3H Silicon N-Channel Power MOSFET

CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.0 30 8 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS1N60C3H Features

* l Fast Switching l Low ON Resistance(Rdson≤10.5Ω) l Low Gate Charge (Typical Data:4.7nC) l Low Reverse transfer capacitances(Typical:2.9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS1N60C3H-HuajingMicroelectronics.pdf