CS1N60C3H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤10.5Ω) l Low Gate Charge (Typical Data:4.7nC) l Low Reverse transfer capacitances(Typical:2.9pF) l 100% Single Pulse avalanche.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 1.0 30 8
performance and enhance the avalanche energy. .
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