CS1N60C1HD
CS1N60C1HD is Silicon N-Channel Power MOSFET manufactured by Huajing Microelectronics.
Description
：
CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 1.5 3 7.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the Ro HS standard.
Features
： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5n C) l Low Reverse transfer capacitances(Typical:5.0p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain...
