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CS1N60C1HD - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS1N60C1HD
Manufacturer Huajing Microelectronics
File Size 815.25 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N60C1HD Datasheet

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Full PDF Text Transcription (Reference)

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Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS1N60C1HD General Description： CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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