CS1N60C1H - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS1N60C1H
Manufacturer	Huajing Microelectronics
File Size	614.17 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N60C1H Datasheet
Additional preview pages of the CS1N60C1H datasheet.

Product details

Description

CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-92, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤10.5Ω).
Low Gate Charge (Typical Data: 8.7nC).
Low Reverse transfer capacitances(Typical:2.8pF).
100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |