CS1N60C1H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number: CS1N60C1H
Manufacturer: Huajing Microelectronics
File Size: 614.17 KB
Datasheet: CS1N60C1H-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

CS1N60C1H Product details

Description

CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-92, which accords with the RoHS standard..

Features

Fast Switching.
Low ON Resistance(Rdson≤10.5Ω).
Low Gate Charge (Typical Data: 8.7nC).
Low Reverse transfer capacitances(Typical:2.8pF).
100% Single Pulse avalanche energy Test.

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Silicon N-Channel Power MOSFET Huajing Microelectronics

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