CS1N60C1H Datasheet | Huajing Microelectronics

Description ： CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the Ro HS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤10.5Ω) - Low Gate Charge (Typical Data: 8.7n C) - Low Reverse transfer capacitances(Typical:2.8p F) - 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS IDMa1 VGS EAS a2 dv/dt a3 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS PD(TC=25℃) RDS(ON)Typ Rating 600 1 0.62 4 ±30 25 5.0 3 0.024 150，- 55 to 150 V A W Ω Units V A A A V m J V/ns W W/℃ ℃ ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2017V01 CS1N60 C1H ○R Electrical Characteristics（Tc= 25℃ unless otherwise...