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CS10N65FA9HD Datasheet Huajing Microelectronics

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Huajing Microelectronics · CS10N65FA9HD File Size : 350.67KB · 2 hits

Features and Benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications: Power switc.

CS10N65FA9HD CS10N65FA9HD CS10N65FA9HD
TAGS
Silicon
N-Channel
Power
MOSFET
CS10N65FA9HD
CS10N65FA9R
CS10N65A8HD

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