Datasheet4U Logo Datasheet4U.com

K1835 - 2SK1835

Key Features

  • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temper.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K1830 2SK1830 Toshiba
K1830 N-Channel 20V MOSFET VBsemi
K1833 2SK1833 Panasonic
K1834 Silicon N-Channel Power F-MOS Panasonic
K1839 2SK1839 Sanyo

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1807 2SK1807
K1808 2SK1808

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1835 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % www.DataSheet4U.com 2.