Suitable for switchingregulator, DC-DC converter
Outline
TO-220FM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK1808
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1808. For precise diagrams, and layout, please refer to the original PDF.
2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown ...
View more extracted text
e • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
More Datasheets from Hitachi Semiconductor (now Renesas)