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K1808 - 2SK1808

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle.

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Full PDF Text Transcription for K1808 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1808. For precise diagrams, and layout, please refer to the original PDF.

2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown ...

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e • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.