• Part: HM62W8511H
  • Description: 4M High Speed SRAM (512-kword x 8-bit)
  • Manufacturer: Hitachi Semiconductor
  • Size: 74.74 KB
HM62W8511H Datasheet (PDF) Download
Hitachi Semiconductor
HM62W8511H

Key Features

  • Single supply : 3.3 V ± 0.3 V
  • Access time 12/15 ns (max)
  • Completely static memory  No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible  All inputs and outputs
  • Operating current : 150/130 mA (max)
  • TTL standby current : 60/50 mA (max)
  • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version)
  • Data retension current : 0.6 mA (max) (L-version)
  • Data retension voltage : 2 V (min) (L-version)