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HM62W8511H Datasheet 4M High Speed SRAM (512-kword x 8-bit)

Manufacturer: Hitachi Semiconductor (now Renesas)

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General Description

The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

Overview

HM62W8511H Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-750D (Z) Rev.

1.0 Sep.

Key Features

  • Single supply : 3.3 V ± 0.3 V.
  • Access time 12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current : 150/130 mA (max).
  • TTL standby current : 60/50 mA (max).
  • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version).
  • Data retension current : 0.6 mA (max) (L-version).
  • Data retension volta.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HM62W8511HC 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HI 4M High Speed SRAM (512-kword x 8-bit)
HM62W8512B 4 M SRAM (512-kword x 8-bit)
HM62W8512BI 4 M SRAM (512-kword x 8-bit)
HM62W1400H 4M High Speed SRAM
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HM62W16255HC 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HI 4M High Speed SRAM (256-kword x 16-bit)
HM62W16256B 4 M SRAM (256-kword x 16-bit)
HM62W16258B 4 M SRAM (256-kword x 16-bit)