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HM62W8512BI - 4 M SRAM (512-kword x 8-bit)

Description

The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit.

HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology.

Features

  • Single 3.3 V supply: 3.3 V ± 0.3V.
  • Access time: 70/85 ns (max).
  • Power dissipation  Active: 16.5 mW/MHz (typ)  Standby: 3.3 µW (typ).
  • Completely static memory. No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output: Three state output.
  • Directly LV-TTL compatible: All inputs and outputs.
  • Battery backup operation.
  • Operating temperature:.
  • 40 to +85˚C Ordering Informati.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM62W8512BI Series 4 M SRAM (512-kword × 8-bit) ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II. Features • Single 3.3 V supply: 3.3 V ± 0.3V • Access time: 70/85 ns (max) • Power dissipation  Active: 16.5 mW/MHz (typ)  Standby: 3.3 µW (typ) • Completely static memory.
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