HM624100H Datasheet - Hitachi Semiconductor

HM624100H 4M High Speed SRAM (1-Mword x 4-bit)

The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed a.

HM624100H Features

* Single 5.0 V supply : 5.0 V ± 10 %

* Access time 10/12/15 ns (max)

* Completely static memory  No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible  All inputs and outputs

* Operating current : 200/180/160 mA

HM624100H Datasheet (74.47 KB)