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HM621100A - 1048576 word / 1 Bit High Speed CMOS Static RAM

Description

The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1bit.

It realizes high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology and high speed circuit designing technology.

Features

  • Single 5 V supply and high density 28-pin package (DIP and SOJ).
  • High speed Access time: 20/25/35 ns (max).
  • Low power dissipation Active mode: 350 mW (typ) Standby mode: 100 µW (typ).
  • Completely static memory required No clock or timing strobe required.
  • Equal access and cycle time.
  • DirectlyTTLcompatible All inputs and outputs Ordering Information Type No. HM621100AP-20 HM621100AP-25 HM621100AP-35 HM621100ALP-20 HM621100ALP-25 HM621100ALP-35.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM621100A Series 1048576-word × 1-bit High Speed CMOS Static RAM Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1bit. It realizes high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology and high speed circuit designing technology. It is most advantageous for the field where high speed and high density memory is required, such as the cache memory for main frame or 32-bit MPU. The HM621100A, packaged in a 400-mil plastic SOJ is available for high density mounting.
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