HAF1002S
Features
This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
- Logic level operation (- 4 to
- 6 V Gate drive)
- High endurance capability against to the short circuit
- Built- in the over temperature shut- down circuit
- Latch type shut- down operation (Need 0 voltage recovery)
Outline
LDPAK
D 4 4
Gate resistor
Tempe- rature Sencing Circuit
1 1
Latch Circuit
Gate Shut- down Circuit
1. Gate 2. Drain 3. Source 4. Drain
HAF1002(L), HAF1002(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS+ VGSS- ID I D(pulse)
Note1
Ratings
- 60
- 16 3
- 15
- 30
- 15
Unit V V V A A A W °C °C
Body-drain diode...
