4AM17 array equivalent, silicon n/p-channel/p-channel power mos fet array.
* Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS =
–10 V, ID =
–4 A
* 4 V g.
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