• Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (MPAK)
Outline
MPAK
3 1
D 3
2
2 G
1. Sourc.
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