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MBM200GR12 - IGBT POWER MODULE

Features

  • Low saturation voltage and high speed.
  • Low turn-OFF switching loss.
  • Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)).
  • High reliability structure.
  • Isolated heat sink (terminals to base).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No. IGBT-SP-99024(R1) MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · High reliability structure. · Isolated heat sink (terminals to base). OUTLINE DRAWING Unit in mm 2- φ 5.6 19 92 80 20 18.5 E2 G2 4-Fast-on Terminal #110 G2 E2 C2E1 E2 C1 C2E1 E2 C1 3-M5 23 23 40 φ 0.
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