K3380 fet equivalent, silicon n channel mos fet.
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* Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) * 4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1.
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