HIRF830

The HIRF830 is N-CHANNEL POWER MOSFET designed by Hi-Sincerity Mocroelectronics.

Product Overview

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HIRF830, HIRF830_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	81.14 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	HIRF830_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HIRF830, HIRF830_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HIRF830 datasheet.

Product details

Description

This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

Features

Dynamic dv/dt Rating.
Repetitive Avalanche Rated.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF830 Series Symbol D G S Absolute Maximum Ratings Symbol VDS.

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Other Datasheets by Hi-Sincerity Mocroelectronics

HIRF830F - N-CHANNEL POWER MOSFET
HIRF840 - N-Channel Power MOSFET
HIRF840F - N-Channel Power MOSFET
HIRF630 - N-Channel MOSFET
HIRF730 - N-CHANNEL POWER MOSFET
HIRF730F - N-CHANNEL POWER MOSFET

Published: Jul 3, 2008 |