HIRF830 Datasheet PDF - Hi-Sincerity Mocroelectronics N-CHANNEL POWER MOSFET Specs

HIRF830 - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the HIRF830, a member of the HIRF830_Hi N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

Features

Dynamic dv/dt Rating.
Repetitive Avalanche Rated.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF830 Series Symbol D G S Absolute Maximum Ratings Symbol VDS.

Datasheet Details

Part number	HIRF830
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	81.14 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	HIRF830 Datasheet
Additional preview pages of the HIRF830 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF830 / HIRF830F N-CHANNEL POWER MOSFET HIRF830 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. www.DataSheet4U.com 2 3 1 Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max.

Published: Jul 3, 2008 |