H9926TS

Manufacturer: Hi-Sincerity Mocroelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H9926TS
Datasheet	H9926TS H9926CTS_Hi Datasheet (PDF)
File Size	76.61 KB
Manufacturer	Hi-Sincerity Mocroelectronics
Description	Dual N-Channel Enhancement-Mode MOSFET

H9926TS Overview

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a.

H9926TS Key Features

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack

More Datasheets from Hi-Sincerity Mocroelectronics

See all Hi-Sincerity Mocroelectronics datasheets

Part Number	Description
H9926CS	Dual N-Channel Enhancement-Mode MOSFET
H9926CTS	Dual N-Channel Enhancement-Mode MOSFET
H9926S	Dual N-Channel Enhancement-Mode MOSFET

Datasheet Details

H9926TS Overview

H9926TS Key Features

More Datasheets from Hi-Sincerity Mocroelectronics

H9926TS Distributor