H9926TS Dual N-Channel Enhancement-Mode MOSFET
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capabil.
with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V)
Q2 Q1
1
2
3
4
Pin 1: Drain 1 Pin 2 / 3: Sou.
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