Datasheet4U Logo Datasheet4U.com

H9926TS Datasheet Dual N-channel Enhancement-mode MOSFET

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number H9926TS
Manufacturer Hi-Sincerity Mocroelectronics
File Size 76.61 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet H9926TS H9926CTS_Hi Datasheet (PDF)

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

It has been optimized for power management applications with a ..

wide range of gate drive voltage (2.5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 2

Key Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number Description
H9926CS Dual N-Channel Enhancement-Mode MOSFET
H9926CTS Dual N-Channel Enhancement-Mode MOSFET
H9926S Dual N-Channel Enhancement-Mode MOSFET

H9926TS Distributor