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H9926S - Dual N-Channel Enhancement-Mode MOSFET

Download the H9926S datasheet PDF. This datasheet also covers the H9926CS_Hi variant, as both devices belong to the same dual n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H9926CS_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H9926S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 77.48 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H9926S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H9926CS Dual N-Channel Enhancement-Mode MOSFET
H9926CTS Dual N-Channel Enhancement-Mode MOSFET
H9926TS Dual N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1 2 3 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 4 Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.
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