H6968S mosfet equivalent, dual n-channel mosfet.
* RDS(on)=32mΩ@VGS=2.5V, ID=5.5A
* RDS(on)=24mΩ@VGS=4.5V, ID=6.5A
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resista.
or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.
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