Datasheet Summary
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)
8 7 6 5
8-Lead Plastic TSSOP-8 Package Code: TS H6968CTS Symbol & Pin Assignment Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain
Features
- RDS(on)<32mΩ@VGS=2.5V, ID=5.5A
- RDS(on)<24mΩ@VGS=4.5V, ID=6.5A
- Advanced Trench Process Technology
- High Density Cell Design for Ultra Low On-Resistance
- Specially Designed for Li ion Battery Packs Use
- Designed for Battery Switch Appliactions
- ESD Protected
Q2...