H6968CTS Dual N-Channel MOSFET
• RDS(on)<32mΩ@VGS=2.5V, ID=5.5A
• RDS(on)<24mΩ@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resista.
or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.
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